FDS6680AS
Manufacturer:
On Semiconductor
Mfr.Part #:
FDS6680AS
Datasheet:
Description:
MOSFETs SOIC-8 SMD/SMT N-Channel number of channels:1 2.5 W 30 V Continuous Drain Current (ID):11.5 A 30 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | -30 V |
| Length | 5 mm |
| Width | 4 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 8 |
| Resistance | 10 MΩ |
| Height | 1.5 mm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Current Rating | -11.5 A |
| Max Power Dissipation | 1 W |
| Power Dissipation | 2.5 W |
| Threshold Voltage | 1.5 V |
| Number of Channels | 1 |
| Input capacitance | 1.24 nF |
| Continuous Drain Current (ID) | 11.5 A |
| Rds On Max | 10 mΩ |
| Drain to Source Voltage (Vdss) | 30 V |
| Turn-On Delay Time | 11 ns |
| Turn-Off Delay Time | 18 ns |
| Element Configuration | Single |
| Fall Time | 11 ns |
| Rise Time | 12 ns |
| Gate Charge | 30 nC |
| Drain to Source Resistance | 100 mΩ |
| Recovery Time | 18 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 30 V |
| Schedule B | 8541290080 |
| Gate to Source Threshold Voltage | 1 V |
| FET Type(Transistor Polarity) | N-Channel |
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